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FDA28N50

Manufacturer:

On Semiconductor

Mfr.Part #:

FDA28N50

Datasheet:
Description:

MOSFETs TO-3P Through Hole N-Channel number of channels:1 310 W 500 V Continuous Drain Current (ID):28 A 105 nC

ParameterValue
Length15.8 mm
Width5 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins2
Resistance155 MΩ
Height20.1 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
Contact PlatingTin
Number of Elements1
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation310 W
Power Dissipation310 W
Number of Channels1
Input capacitance5.14 nF
Continuous Drain Current (ID)28 A
Rds On Max155 mΩ
Drain to Source Voltage (Vdss)500 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time56 ns
Turn-Off Delay Time210 µs
Element ConfigurationSingle
Fall Time110 ns
Rise Time126 ns
Gate Charge105 nC
Drain to Source Resistance155 mΩ
Gate to Source Voltage (Vgs)30 V
Drain to Source Breakdown Voltage (Vds)500 V
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Gate to Source Threshold Voltage3 V

Stock: 1

Distributors
pcbx
Unit Price$4.39805
Ext.Price$4.39805
QtyUnit PriceExt.Price
1$4.39805$4.39805
10$3.78019$37.80190
25$3.56548$89.13700
50$3.36296$168.14800
100$3.17195$317.19500
300$2.99178$897.53400
500$2.82183$1410.91500